Title:
RESIST RESIDUAL REMOVAL AGENT
Document Type and Number:
Japanese Patent JP3328250
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To remove residual containing a metal component generated by dry etching without corroding a wiring, gate metal, etc., by employing resist residual removal agent that is composed of ammonium phosphate and condensation ammonium phosphate and constituted of water solution whose pH is in a range of 1-10.
SOLUTION: Photo resist is applied onto a conductive metal film, an insulation film, etc., formed over a substrate, then a resist pattern is formed by exposing to light and developing, and the metal film, the insulation film, etc., are selectively etched with the pattern as a mask, and then unnecessary resist is removed by ashing. Then residual such as the left resist is removed with resist residual removal agent. This resist residual removal agent comprises ammonium salt orthophosphate, ammonium phosphate such as neutral salt, and condensation ammonium phosphate such as polyphosphate and metaphosphate, and constituted of water solution whose pH is in a range of 1-10.
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Inventors:
Takashi Yada
Shigeki Terayama
Koenuma Yutaka
Ken Ohgushi
Shigeki Terayama
Koenuma Yutaka
Ken Ohgushi
Application Number:
JP33420299A
Publication Date:
September 24, 2002
Filing Date:
November 25, 1999
Export Citation:
Assignee:
Kishimoto Sangyo Co., Ltd.
International Classes:
H01L21/302; G03F7/42; H01L21/027; H01L21/304; H01L21/3065; H01L21/308; H01L21/311; (IPC1-7): H01L21/027; G03F7/42; H01L21/304; H01L21/3065; H01L21/308
Domestic Patent References:
| JP736184A | ||||
| JP5198927A | ||||
| JP6160799A | ||||
| JP6415740A |
Attorney, Agent or Firm:
Youichi Ishii