Title:
RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING IMPROVED FLATNESS
Document Type and Number:
Japanese Patent JP2023051942
Kind Code:
A
Abstract:
To provide a method of reducing a step (Iso-dense bias)(reverse step) of a resist underlay film of a portion that has the step and a portion that does not have the step by 5 nm or more, in a formed resist underlay film, containing a step of coating on a semiconductor substrate top surface having a portion that has a step and a potion that has not the step.SOLUTION: A method for reducing a step (Iso-dense bias) of a resist underlayer film comprises adding further (C) a fluorosurfactant to a resist underlayer film forming composition containing (A) a polymer and (D) a solvent, and coating (C) the composition to which the fluorosurfactant is added on a semiconductor substrate top surface having a portion having the step and a portion without the step, where a step (reverse step) of the resist underlayer film of a portion with the step and a portion without the step is reduced by 5 nm or more.SELECTED DRAWING: None
Inventors:
Hirokazu Nishimaki
Takafumi Endo
Takafumi Endo
Application Number:
JP2022198082A
Publication Date:
April 11, 2023
Filing Date:
December 12, 2022
Export Citation:
Assignee:
Nissan Chemical Co., Ltd.
International Classes:
G03F7/11; B05D7/24; C08G12/08; C08G61/12; C09D7/47; C09D179/02
Attorney, Agent or Firm:
Patent Attorney Corporation Hanabusa Patent and Trademark Office