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Title:
RESIST UNDERLAYER FILM MATERIAL AND PATTERN FORMING METHOD USING THE SAME
Document Type and Number:
Japanese Patent JP2008310229
Kind Code:
A
Abstract:

To provide a resist underlayer film material having an optimum n value and k value in exposure to short-wavelength light, excellent also in etching resistance under substrate etching conditions, and having promise as a resist underlayer film for a multilayer resist process such as a silicon-containing two-layer resist process or a three-layer resist process using a silicon-containing intermediate layer film.

The resist underlayer film material of a multilayer resist film used in lithography has at least a repeating unit represented by general formula (1).


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Inventors:
HATAKEYAMA JUN
WATANABE TAKESHI
KANOU TAKESHI
FUJII TOSHIHIKO
OGIWARA TSUTOMU
Application Number:
JP2007159992A
Publication Date:
December 25, 2008
Filing Date:
June 18, 2007
Export Citation:
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Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F7/11; C08F232/08; G03F7/26; H01L21/027
Domestic Patent References:
JP2006053543A2006-02-23
JP2004205658A2004-07-22
JP2003021904A2003-01-24
Attorney, Agent or Firm:
Mikio Yoshimiya



 
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