To provide a resistance change type memory and a preparing method therefore, in which preparation efficiency can be enhanced and in which high integration can be easily achieved.

A resistance change type memory includes: a long-shaped bit line; a long-shaped word line intersecting with the bit line; and an insulation layer interposed between the bit line and the word line. The insulation layer covers the peripheral surface of the word line at a position where the bit line and the word line are intersected with each other.