To provide a resistance control circuit for MOSFET with which an MOSFET can be controlled into desired resistance value without being affected by the dispersion of elements or temperature characteristics.

This circuit has a current mirror circuit 1 having first and second MOSFET 5 and 6, a first current source 2, an operational amplifier 3 and a voltage impressing means 4, the respective sources of the first and second MOSFET 5 and 6 are connected to a first power supply terminal VDD, and the first current source 2 is connected between the drain electrode of the first MOSFET 5 and a second power supply terminal (ground). Then, the non-inverted input terminal of the operational amplifier 3 is connected to the drain electrode of the first MOSFET 5, the output terminal of the operational amplifier 3 is connected to the gate electrodes of the first and second MOSFET 5 and 6, and a prescribed voltage is impressed to the inverted input terminal of the operational amplifier 3 by the voltage impressing means 4 so that the first and second MOSFET 5 and 6 can be operated in an MOS resistance area. On the basis of the current value of the first current source 2, a resistance value between the source electrode and drain electrode of the second MOSFET 6 is controlled.