Title:
RESISTIVE ELEMENT
Document Type and Number:
Japanese Patent JP2005175191
Kind Code:
A
Abstract:
To provide a polysilicon resistive element having small temperature dependency of resistance value considering that the improvement in precision of resistance value and the stability of resistance value used in an analog circuit are required.
The resistance value of a polysilicon film (poly-SiGe film) containing germanium increases with the temperature rise. At the same time, the resistance value of a polysilicon film decreases with the temperature rise. Thus, a resistive element having small temperature change in resistance value can be realized by laminating the poly-SiGe film and the polysilicon film.
Inventors:
ONISHI TERUTO
Application Number:
JP2003413001A
Publication Date:
June 30, 2005
Filing Date:
December 11, 2003
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01C13/00; H01L21/822; H01L27/04; (IPC1-7): H01C13/00; H01L21/822; H01L27/04
Attorney, Agent or Firm:
Fumio Iwahashi
Tomoyasu Sakaguchi
Hiroki Naito
Tomoyasu Sakaguchi
Hiroki Naito