To provide a resonant tunnel diode whose peak valley current ratio is high and which is capable of being manufactured without employing special devices and a manufacturing method thereof.
A first quantum well layer 11 and a second quantum well layer 12 are arranged in pairs. Both of the first quantum well layer 11 and the second quantum well layer 12 are composed of π conjugate molecules. The π conjugate molecules have an energy level of a molecular orbital which exists in isolation discretizing towards energy vertical directions and have a steep state density locally towards energy vertical directions. The first quantum well layer 11 is formed by being sandwiched between a first energy barrier layer 13 and a second energy barrier layer 14 and the second quantum well layer 12 is formed by being sandwiched between the second energy barrier layer 14 and a third energy barrier layer 15. A first electrode 16 is formed on the opposite side of the first quantum well layer 11 of the energy barrier layer 13 and a second electrode 17 is formed on the opposite side of the second quantum well layer 12 of the third energy barrier layer 15.
| JPS5320862 | PRODUCTION OF SEMICONDUCTOR DEVICE |
| WO/2022/163082 | SIC SEMICONDUCTOR DEVICE |
| JPH0618276 | [Title of Invention] Semiconductor device |
AZUMA YASUO
OGAWA DAISUKE
篠田 哲也
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