PURPOSE: To provide a high withstand voltage together with a wide separation band by forming an independent second conductivity type high-doped layer in a first conductivity type semiconductor layer on the anode electrode side of the separation band which is located between a gate turn-off thyristor and anti-parallel diodes.

CONSTITUTION: A high concentration n+ layer 13 is provided at an equal interval in a p-type layer (A first conductivity type semiconductor layer) 12 located in the lower part of a separator C for separating a gate turn-off thyristor(GTO part a) from anti-parallel diode (RCDD part b) as a high-doped layer. The multiplication phenomenon of carriers is controlled with an independent second conductivity type high-doped layer formed in the first conductivity type semiconductor layer on the anode electrode side of a separation band which is located between the gate turn-off thyristor and the anti-parallel diodes.