Title:
RF PLASMA CVD SIMULATOR, AND RF PLASMA CVD SIMULATION METHOD
Document Type and Number:
Japanese Patent JP3530430
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an RF plasma CVD simulator and an RF plasma CVD simulation method, capable of providing optimum film deposition conditions with respect to the whole of the reactions incidental to plasma CVD, by using nonempirical, objective parameters without recourse to a rule of thumb.
SOLUTION: In the RF plasma CVD simulator, the deposition simulation of a thin film formed on the surface of a substrate is carried out from respective data of gas species, gas pressure, gas flow rate, power-supply electric power, commercial frequency, electrode-to-substrate distance, substrate temperature, residence time of gas, volume of reaction vessel, internal surface area of reaction vessel, and area of substrate in an RF plasma CVD system. As to the reaction rate constant of plasma reaction, deposition simulation is performed by using the values determined from RF plasma analysis; as to the reaction rate constant of vapor phase/film surface reaction, deposition simulation is performed by using the values determined from offline quantum chemical computation and transition state theory. Deposition rate and film properties are computed by using these reaction rate constants.
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Inventors:
Satake, Koji
Shigenaka, Toshiaki
Shigenaka, Toshiaki
Application Number:
JP28686399A
Publication Date:
May 24, 2004
Filing Date:
October 07, 1999
Export Citation:
Assignee:
MITSUBISHI HEAVY IND LTD
International Classes:
H01L21/205; C23C16/505; (IPC1-7): C23C16/505; H01L21/205
Other References:
今石宣之他，ＣＶＤのシミュレーション，表面科学，１９９４年，第１５巻，第４号，第２３３−２３９頁
Attorney, Agent or Firm:
鈴江 武彦 （外４名）