To provide a salt for an acid-generating agent of a resist composition which can form patterns having excellent resolution and line edge roughness.
There is provided the salt represented by formula (I) and comprising a triaryl sulfonium cation and α, α-difluoroadamantyloxycarbonyl methane sulfonate anion. A photoresist composition is especially useful for chemical amplification type photoresist compositions, and can suitably be used for wide uses such as fine processing of semiconductors, liquid crystals, the production of circuit boards for thermal heads and the like, and other photofabrication processes. The photoresist composition can especially be used as a chemical amplification type photoresist composition suitable for ArF or KrF excimer laser lithography, ArF immersion exposure lithography, EB exposure lithography, and EUV exposure lithography. The photoresist composition can also be used for immersion exposure, dry exposure and the like.
YOSHIDA ISAO
SUGIHARA MASAKO
| JP2007161707A | 2007-06-28 | |||
| JP2009046479A | 2009-03-05 |
Toru Sakamoto