To solve the problem that, since two surface electrodes are formed with different wavelengths on an active layer, and a current flows to the both in a conventional screening method, it is impossible to carry out screening by choosing one of the wavelengths although it is necessary to screen for each active layer i.e., for each wavelength when screening a multiple wavelength semiconductor laser device having a plurality of stripes.
In a jig which screens the multiple wavelength semiconductor laser device having the plurality of stripes, a heat sink is formed by laminating a conductive electrode and a non-conductive material. Screening is carried out by choosing a laser of a desired wavelength and bringing the heat sink in contact with only the screening electrode out of a plurality of electrodes of the laser element which performs screening.
JP3248155 | DRIVING METHOD OF SEMICONDUCTOR LASER |
WO/1994/017576 | POWER-CONTROLLED FRACTAL LASER SYSTEM |
JPH09266352 | SEMICONDUCTOR LIGHT EMITTING ELEMENT |
TAMURA YOSHIKAZU
Tomoyasu Sakaguchi
Hiroki Naito
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