Title:
SELECTIVE ISOTROPIC ETCHING PROCESS FOR TITANIUM-BASED MATERIAL
Document Type and Number:
Japanese Patent JP2005105416
Kind Code:
A
Abstract:
To provide a process for etching a titanium-based layer in a semiconductor or in a device of a micromachining system.
The process is a process for etching a sacrificial layer in a structure. The structure is exposed to a plasma derived from nitrogen trifluoride for etching the sacrificial layer. The process is selective so that it etches titanium-nitride and titanium but does not affect adjacent silicon dioxide or aluminum layers. Application examples of the process include the formation of integrated circuit structures and MEMS structures.
Inventors:
CAMPBELL TIMOTHY S
CHESIRE DANIEL P
HINCKLEY KELLY
HEAD GREGORY A
PATEL BENU B
CHESIRE DANIEL P
HINCKLEY KELLY
HEAD GREGORY A
PATEL BENU B
Application Number:
JP2004278932A
Publication Date:
April 21, 2005
Filing Date:
September 27, 2004
Export Citation:
Assignee:
AGERE SYSTEMS INC
International Classes:
B81C1/00; C23F4/00; H01L21/3065; B81B3/00; H01L21/3213; (IPC1-7): C23F4/00; B81B3/00; B81C1/00
Domestic Patent References:
| JPH08203870A | 1996-08-09 | |||
| JPS5127833A | 1976-03-09 |
Foreign References:
| WO2003023849A1 | 2003-03-20 | |||
| WO2002013241A2 | 2002-02-14 |
Attorney, Agent or Firm:
Masao Okabe
Nobuaki Kato
Kazuo
Shinichi Usui
Takao Ochi
Teruhisa Motomiya
Asahi Shinmitsu
Katsumi Miyama
Nobuaki Kato
Kazuo
Shinichi Usui
Takao Ochi
Teruhisa Motomiya
Asahi Shinmitsu
Katsumi Miyama