Title:
SEMICONDUCTOR COLD CATHODE
Document Type and Number:
Japanese Patent JP2001357774
Kind Code:
A
Abstract:
To provide a new semiconductor device in which an ultra-high speed and a high output can be achieved.
On an InP substrate 1, a GaInAs emitter layer 2 having a thickness of 380 nm, a semiconductor layer 3 of double barrier quantum well structure consisting of an AlAs barrier layer and a GaInAs well layer 5, an InP electron transit layer 4 having a thickness of 100 nm, and a GaInAs contact layer 5 having a thickness of 320 nm are successively formed as a mesa structural state having a size of 2 μm×5 μm. On the GaInAs emitter layer 2 and GaInAs contact layer, Si is doped in a predetermined concentration.
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Inventors:
MIYAMOTO YASUYUKI
KURITA MASANAO
KURITA MASANAO
Application Number:
JP2000176374A
Publication Date:
December 26, 2001
Filing Date:
June 13, 2000
Export Citation:
Assignee:
TOKYO INST TECH
International Classes:
H01J1/308; H01L29/66; (IPC1-7): H01J1/308; H01L29/66
Attorney, Agent or Firm:
Akihide Sugimura (2 outside)