Title:
SEMICONDUCTOR DEVICE AND FABRICATING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JPS5518057
Kind Code:
A
Abstract:
PURPOSE:To prevent disconnection of metallic wiring in a semiconductor device by providing two or more steps on the side surface coated with an insulating film on a substrate. CONSTITUTION:An insulating film such as, for example, a silicon oxide film PSG2 containing phosphorus is formed on a semiconductor substrate 1, and a photoresist 3 is selectively coated on on the film PSG2. Then, the film PSG2 etched to approx. half of the thickness thereof with the photoresist 3 as a mask. Then, a photoresist 5 is retained in an undercut region under the photoresist 3. The film PSG2 is then etched until the surface of the substrate 1 is exposed. Since the side surface of the insulating film 2 thus treated is formed with two steps, a metallic film 6 formed on the film 2 tends to be difficult to disconnect in shape. When this process is repeated, the coated surface of the insulating film 2 can be formed with two or more steps.
Inventors:
YAMANAKA YOUJI
Application Number:
JP9109178A
Publication Date:
February 07, 1980
Filing Date:
July 25, 1978
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/3205; H01L21/302; H01L21/306; (IPC1-7): H01L21/302; H01L21/88