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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP2000058595
Kind Code:
A
Abstract:

To set an allowable range of characteristic impedance of a transmission circuit so as to obtain an excellent high-frequency characteristic, by providing a specified clearance between the surface of a coplanar transmission line on a semiconductor chip and that of an electrode on a substrate when flip-chip mounting a coplanar type MMIC chip to the substrate.

In an MM(monolithic microwave) IC chip, a bump is formed on the chip side, and the thickness of an Au bump 6-a or 6-b is adjusted in advance in consideration of compression in the heightwise direction of the Au bump by press-fitting, so that a clearance H between the surface of a coplanar transmission line and that of a substrate electrode is within 11 to 29 μm when the coplanar transmission line 8 made of Au layer for example is flip-chip mounted on an alumina substrate 7. Thus, the characteristic impedance of the coplanar transmission line can be set to a range of 50 Ω±2 Ω. The attenuation or reflection of a high-frequency signal is suppressed, setting the high-frequency characteristic to a design standard.


Inventors:
YOKOGAWA SHIGERU
Application Number:
JP22307198A
Publication Date:
February 25, 2000
Filing Date:
August 06, 1998
Export Citation:
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Assignee:
FUJITSU LTD
FUJITSU QUANTUM DEVICE KK
International Classes:
H01L23/12; H01L21/60; H01P3/02; (IPC1-7): H01L21/60; H01L23/12; H01P3/02
Attorney, Agent or Firm:
Teiichi