Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP2606143
Kind Code:
B2
Abstract:
PURPOSE: To provide the structure of a semiconductor device and its manufacturing method whereby the increase of the resistivity of its gate electrode can be suppressed, and as a result, the bridging phenomena generated between its gate electrode and its source-drain region can be suppressed.
CONSTITUTION: A gate electrode 113a of a semiconductor device comprises a polycrystal silicon film 103a and a titanium silicide film 108aa, and the contacting width of both films 103a, 108aa is larger than the gate length of the semiconductor device. Further, the spacer of the semiconductor device comprises an silicon oxide film spacer 114a whose upper end is lower than the top surface of the gate electrode 113a and a silicon nitride film spacer 115a whose upper end is higher than the top surface of the gate electrode 113a.
Inventors:
Hiroshi Kawaguchi
Application Number:
JP17060494A
Publication Date:
April 30, 1997
Filing Date:
July 22, 1994
Export Citation:
Assignee:
NEC
International Classes:
H01L21/28; H01L21/318; H01L21/3205; H01L21/336; H01L21/8234; H01L23/52; H01L29/45; H01L29/49; H01L29/78; H01L29/423; (IPC1-7): H01L29/78; H01L21/3205
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)