Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3208153
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor storage device which is capable of micronization and easy in manufacture.
CONSTITUTION: First, this is characterized by a trench 105 taking such shape as to be slid in the channel width direction of a MOSFET and project in the direction of a gate, in a DRAM of such structure that a storage node electrode is made through an insulating film inside the trench 105 made in a memory cell region and a capacitor is made, and that the storage node electrode is connected to the source and drain regions of the MOSFET through the contact made in one part of this insulating film 120. Second, the trenches 105 are made leaving island regions which become element regions, and out of these trenches 105, the ones used for element isolation are filled up completely with insulating films 120 or polycrystalline silicon, while the ones used for capacitors are made not to be filled up completely, and capacitors are made in these recesses.
Inventors:
Sunouchi Kazumasa
Toru Ozaki
Seiichi Takedai
Yoshiyuki Shioyama
Toru Ozaki
Seiichi Takedai
Yoshiyuki Shioyama
Application Number:
JP16316691A
Publication Date:
September 10, 2001
Filing Date:
July 03, 1991
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/76; H01L21/822; H01L21/8242; H01L27/04; H01L27/10; H01L27/108; (IPC1-7): H01L27/108; H01L21/76; H01L21/822; H01L21/8242; H01L27/04
Domestic Patent References:
| JP6012752A | ||||
| JP6242442A | ||||
| JP254575A | ||||
| JP645052A | ||||
| JP1280350A | ||||
| JP2119175A |
Attorney, Agent or Firm:
Takahisa Kimura