To provide a method for manufacturing a semiconductor device capa ble of reducing a capacity of a PN junction and improving a surge resistance.
The method for manufacturing the semiconductor device comprises the step of forming a first N-type semiconductor diffused layer 6 in a shallow region (small sectional area) on a P-type semiconductor substrate 1. The method further comprises the steps of laminating an N-type semiconductor substrate in which a second N-type semiconductor layer 7 and an insulation layer 8 are formed, to the P-type substrate 1. The method also comprises the step of forming a first electrode 15 on the second N-type semiconductor layer 7. With such a manufacturing method, the semiconductor device in which the PN junction 17 generated in an interface between the substrate 1 and the diffused layer 6 is separated from the first electrode 15 by the second N-type semiconductor layer 7 while reducing the sectional area of the PN junction, is obtained.
YAMAGUCHI YASUSHI
MURATA YOSHINORI
NAKAHARA AKIHIRO
