Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2004327982
Kind Code:
A
Abstract:
To provide a semiconductor device having high reliability and capable of improving a processing yield and productivity, and its manufacturing method.
A manufacturing method of the semiconductor device comprises: forming a surface electrode 6 in a semiconductor element 1; forming a solder layer 4 on a main surface of the surface electrode 6 by plating; disposing the semiconductor element 1 on a submount 2 so that the solder layer 4 is brought into contact with the main surface of the submount 2; and fixing the submount 2 and the semiconductor element 1 through the solder layer 4. Since a processing yield and productivity of the semiconductor device can be improved, this method can be used for manufacturing various semiconductor devices.
Inventors:
YAMANE KEIJI
UEDA TETSUO
MIYAMOTO TAKASHI
KIDOGUCHI ISAO
UEDA TETSUO
MIYAMOTO TAKASHI
KIDOGUCHI ISAO
Application Number:
JP2004113432A
Publication Date:
November 18, 2004
Filing Date:
April 07, 2004
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01S5/022; H01S5/042; (IPC1-7): H01S5/022; H01S5/042
Attorney, Agent or Firm:
Ikeuchi, Sato & Partners
Previous Patent: SEMICONDUCTOR LASER DIODE UTILIZING SELF-ALIGNMENT AND METHOD FOR MANUFACTURING THE SAME
Next Patent: PLATED TERMINATION
Next Patent: PLATED TERMINATION