To provide a method of manufacturing a semiconductor device, wherein an interconnection consisting of carbon nanotubes is formed by controlling the growth mode of the carbon nanotubes, and to provide a semiconductor device manufactured by the same.
On a substrate 11, growth mode control layers 12 and 15 formed of either one of high-melting point metals, comprising Mo, V, Nb, and W, or Ti, or a metal oxide of either of the metals, and a catalyst layer 13 are formed, in this order. Thereafter, the substrate 11 is heated by thermal CVD method and then is supplied with a processing gas containing carbon, such as acetylene gas. The carbon nanotubes 14 are formed in a root growth mode or a tip growth mode, by controlling the oxygen density in an oxygen atmosphere in which the growth mode control layer 12 is formed by sputtering to lower than 0.1 vol% or to not lower than 0.1 vol%, respectively. Moreover, a method of manufacturing a semiconductor device is disclosed wherein a growth mode is controlled, and at the same time, vias, interconnections, such as contacts, and through-electrodes are formed by a novel selective formation method, and a semiconductor device manufactured by the method.
KAWABATA AKIO
NIHEI MIZUHISA
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