SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Japanese Patent JP2006049795

A

To provide a semiconductor device and its manufacturing method which can manufacture a high reliable semiconductor device having capacitor in high yield.

The device comprises a first insulating film 26 formed on a semiconductor substrate 10, a first conducting plugged 32 embedded inside a first contact hole 28a reaching a source/drain diffusing layer 22, a capacitor 44 formed on the first insulating film, a first hydrogen diffusion preventing film 48 formed on the first insulating film so that it may cover the capacitor, a second insulating film 50 which is formed on the first hydrogen diffusion preventing film and planarized in front surface, a second hydrogen diffusion preventing film 52 formed on the second insulating film, a second conducting plugged 62 embedded inside a second contact hole 56 reaching a lower electrode 38 or an upper electrode 42 of the capacitor, a third conducting plugged 62 embedded inside a third contact hole 58 reaching the first conducting plugged, and an interconnect line 64 connected with the second conducting plugged or the third conducting plugged.

SAJITA NAOYA
OZAKI YASUTAKA
NAGAI KOICHI
KIKUCHI HIDEAKI

JP2004330438A

February 16, 2006

November 15, 2004

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FUJITSU LTD

H01L27/105; H01L21/02; H01L21/31; H01L21/469; H01L21/8234; H01L21/8242; H01L21/8244; H01L21/8246; H01L23/48; H01L23/52; H01L27/06; H01L27/108; H01L27/115; H01L29/40; H01L29/76; H01L29/94; H01L31/119

JP2003152165A	2003-05-23
JP2003158247A	2003-05-30
JP2001291843A	2001-10-19
JP2003282825A	2003-10-03
JP2003204040A	2003-07-18
JP2002305289A	2002-10-18

Yoshito Kitano
Haruhiko Mimura

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