Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2016171305
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device, having corrosion resistance, provided with a fuse element that can be cut with laser.SOLUTION: A silicon nitride film is disposed on an upper part of the fuse element through a metal grating and an interlayer film remained therebetween so that a laser beam radiated from a rear face of the semiconductor substrate is focused on the fuse element to enable heat generation, expansion, and burst. To prevent intrusion of moisture, the silicon nitride film of a uniform thickness is disposed on a surface of the semiconductor device.SELECTED DRAWING: Figure 1
Inventors:
IMURA YUKIHIRO
KIMURA YOSHITAKA
AKINO MASARU
KIMURA YOSHITAKA
AKINO MASARU
Application Number:
JP2016007338A
Publication Date:
September 23, 2016
Filing Date:
January 18, 2016
Export Citation:
Assignee:
SII SEMICONDUCTOR CORP
International Classes:
H01L21/82; H01L21/3205; H01L21/768; H01L21/822; H01L23/522; H01L23/532; H01L27/04
Domestic Patent References:
| JP2009004565A | 2009-01-08 | |||
| JPH11307638A | 1999-11-05 | |||
| JPS63136545A | 1988-06-08 | |||
| JP2004289131A | 2004-10-14 | |||
| JP2007019264A | 2007-01-25 |
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