Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2016171304
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device, having corrosion resistance, provided with a fuse element that can be cut with laser.SOLUTION: An upper part of the fuse element is covered with a porous insulating film so that a laser beam radiated from a rear face of the semiconductor substrate is focused on the fuse element to enable heat generation, expansion, and burst. To prevent intrusion of moisture, a silicon nitride film of a uniform thickness is disposed on a surface of the semiconductor device.SELECTED DRAWING: Figure 1
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Inventors:
IMURA YUKIHIRO
KIMURA YOSHITAKA
AKINO MASARU
KIMURA YOSHITAKA
AKINO MASARU
Application Number:
JP2016007337A
Publication Date:
September 23, 2016
Filing Date:
January 18, 2016
Export Citation:
Assignee:
SII SEMICONDUCTOR CORP
International Classes:
H01L21/82; H01L21/3205; H01L21/768; H01L21/822; H01L23/522; H01L23/532; H01L27/04
Domestic Patent References:
| JP2004289131A | 2004-10-14 | |||
| JP2007019264A | 2007-01-25 | |||
| JPH0917877A | 1997-01-17 | |||
| JPH10321726A | 1998-12-04 | |||
| JP2004281612A | 2004-10-07 | |||
| JP2009004565A | 2009-01-08 |