Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT WITH THE SAME
Document Type and Number:
Japanese Patent JP2023162754
Kind Code:
A
Abstract:
To provide a semiconductor device in which a decrease in the input signal to the gate wiring can be suppressed, thereby reducing the current density bias in the plane of a switching element.SOLUTION: The sheet resistance of gate wiring 112 is smaller than the sheet resistance of a first conductivity type (N-type) polycrystalline silicon of a Zener diode 210 of a diode region 20 with a second end 22 electrically connected to the gate wiring 112.SELECTED DRAWING: Figure 2
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Inventors:
ISHII TAKAAKI
Application Number:
JP2022073354A
Publication Date:
November 09, 2023
Filing Date:
April 27, 2022
Export Citation:
Assignee:
SANKEN ELECTRIC CO LTD
International Classes:
H01L21/3205; H01L29/78; H01L21/329; H01L29/739
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