Title:
SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD AND MOUNTING STRUCTURE
Document Type and Number:
Japanese Patent JP3894749
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enhance heat dissipating performance of a power MOSFET.
SOLUTION: A power MOSFET 23 comprises a pellet 16 in which power MOSFETs are fabricated, a heat spreader 11 bonded with the pellet 16, a frame 13 bonded to the outside of the pellet 16 on the heat spreader 11, a plurality of leads 15 bonded to the frame 13 and connected electrically with the pellet 16 through a wire 21, and a resin sealing body 22 sealing the inner part 15a of each lead 15 wherein the outer part 15b of each lead 15 is bent in the direction opposite to the heat spreader 11. The power MOSFET 23 is mounted on a mounting board 30 while directing the heat spreader 11 side oppositely to the mounting board 30 side. Since the heat spreader is located on the side opposite to the mounting board, heat can be dissipated efficiently from the heat spreader.
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Inventors:
Shuichi Yamaura
Osamu Kanai
Osamu Kanai
Application Number:
JP2001184913A
Publication Date:
March 22, 2007
Filing Date:
June 19, 2001
Export Citation:
Assignee:
Renesas Technology Corp.
Renesas Electronics East Japan Semiconductor Co., Ltd.
Renesas Electronics East Japan Semiconductor Co., Ltd.
International Classes:
H01L23/28; H01L21/52; H01L23/34; H01L21/56; H01L23/36; H01L23/40; H01L25/07; H01L25/18; (IPC1-7): H01L25/07; H01L21/52; H01L21/56; H01L23/34; H01L23/36; H01L23/40; H01L25/18
Domestic Patent References:
| JP3203357A | ||||
| JP5226393A | ||||
| JP6252316A | ||||
| JP3203356A | ||||
| JP2000183281A |
Attorney, Agent or Firm:
Kajiwara Tatsuya