Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH03211888
Kind Code:
A
Abstract:
PURPOSE:To obtain a semiconductor light emitting element having excellent mass productivity, functional design, and long life by composing a mixed crystal of a superlattice layer of BP and GaAlN having zincblende type crystal structure or BP and GaAlN on a transparent substrate having a tetragonal crystal structure. CONSTITUTION:A rutile (TiO2) being transparent for an emitting light wavelength and having a high melting point, a lattice constant of the same degree as BP on a grown flat surface and a tetragonal crystal structure or an MnO substrate 71 having a common salt type structure is employed as a substrate 71 to perform a high temperature growth, to obtain a crystal of high quality and to alleviate a stress to be applied to an active layer for enhancing lattice matching properties. That is, a double hetero junction having a p-type GaAlN /BP superlattice layer 81, an undoped GaAlN/BP superlattice layer 82 and an n-type GaAlN/BP superlattice layer 83 is formed on the TiO2 substrate 71. A GaN contact layer 75 mostly of WZ type is formed thereon. Thus, a semiconductor light emitting element having a high efficiency, an excellent mass productivity, functional design and long life is obtained.
Inventors:
HATANO GOKOU
IZUMITANI TOSHIHIDE
OBA YASUO
IZUMITANI TOSHIHIDE
OBA YASUO
Application Number:
JP636490A
Publication Date:
September 17, 1991
Filing Date:
January 17, 1990
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/205; H01L33/06; H01L33/20; H01L33/32; H01L33/36; H01L33/54; H01S5/00; (IPC1-7): H01L21/205; H01L33/00; H01S3/18
Attorney, Agent or Firm:
Hideaki Tokawa (1 outside)
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