Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH07263573
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor device and a method for manufacturing it in which capacity per unit area can be sufficiently secured by preventing the reaction of tantalum oxide to polysilicon to suppress the generation of a leakage current in a semiconductor device which uses a tantalum oxide for a dielectric film and a polysilicon film for an upper electrode.
CONSTITUTION: An oxide silicon film 22 is formed on a silicon substrate 21 and a polysilicon film 23a is selectively formed for a lower electrode, and an oxide silicon film 25, a tantalum oxide film 24, a titanium oxide film 26 for reaction preventing film and a polysilicon film 27 for an upper electrode are formed in sequence so as to cover the polysilicon film 23a.
Inventors:
MATSUHASHI HIDEAKI
Application Number:
JP5399994A
Publication Date:
October 13, 1995
Filing Date:
March 24, 1994
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L27/04; H01L21/336; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; H01L29/78; (IPC1-7): H01L21/8242; H01L27/108; H01L27/04; H01L21/822; H01L29/78; H01L21/336
Attorney, Agent or Firm:
Toshiaki Suzuki