Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2012243840
Kind Code:
A
Abstract:
To improve manufacturing yield of a semiconductor device by reducing bond failure of bump electrodes.
A semiconductor device comprises a plurality of bonding pads 4 formed on a surface of a semiconductor chip 3, and a plurality of leads 2 connected with the plurality of bonding pads 4 via a plurality of bump electrodes 5, respectively. A top face of each of the plurality of leads 2 is formed not as a flat surface (maximum height (Ry)=0) but as a semi-gloss surface having roughness of a maximum height (Ry) in a range from larger than 0 μm and not more than 20 μm (0 μm<maximum height (Ry)≤20 μm).
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Inventors:
NARITA HIROAKI
MASUDA KEN
MAKINAE AKIRA
MASUDA KEN
MAKINAE AKIRA
Application Number:
JP2011110189A
Publication Date:
December 10, 2012
Filing Date:
May 17, 2011
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L23/50
Domestic Patent References:
| JPH10256458A | 1998-09-25 | |||
| JPH10335559A | 1998-12-18 | |||
| JP2008004687A | 2008-01-10 | |||
| JP2005146343A | 2005-06-09 |
Attorney, Agent or Firm:
Yamato Tsutsui
Atsushi Sugada
Akiko Tsutsui
Toru Nakahara
Tetsuya Sakaji
Atsushi Sugada
Akiko Tsutsui
Toru Nakahara
Tetsuya Sakaji
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