Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP3941915
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an IGBT-type semiconductor device whose switching characteristic when in turn-off is close to an MOSFET-type and to provide the manufacturing method.
SOLUTION: A conductive film 20 which has a function as a collector electrode and is connected to an EQR electrode 25 is formed on the back and a peripheral side of the semiconductor device 1. When voltage is applied to an emitter electrode 18 and the conductive film 20, current flowing through a p+-type layer 10, an n--type layer 11, a P well layer 12 and an N+-type diffusion area 13 and current flowing in the EQR electrode 25, a channel stopper area 24, the N--type layer 11, the P well layer 12 and the N+-type diffusion area 13 are generated. Thus, the IGBT-type semiconductor device close to the MOSFET-type is constituted.
Inventors:
Toshiki Matsubara
Kuriyama Masahiro
Kuriyama Masahiro
Application Number:
JP2001100923A
Publication Date:
July 11, 2007
Filing Date:
March 30, 2001
Export Citation:
Assignee:
Shindengen Industry Co., Ltd.
International Classes:
H01L29/739; H01L21/336; H01L29/78; (IPC1-7): H01L29/78; H01L21/336
Domestic Patent References:
| JP62219667A | ||||
| JP1129462A |