Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JPH06204233
Kind Code:
A
Abstract:
PURPOSE: To lower the inner base resistance while reducing the conventional heat generating density in an operation part for enhancing the performances of HBT(hetero bipolar transistor).
CONSTITUTION: Within the semiconductor device, the emitter conventionally formed in a finger shape is divided into multiple emitter layers 21 halfway in the finger to be formed in island shape while a base electrode 5 is formed in a stitch shape as if encircling respective emitter layers 21. Through these procedures, the inner base resistance can be lowered while reducing the heat generating density in an operational part thereby enabling the performances of HBT such as gain, output power, efficiency, etc., to be enhanced.
Inventors:
KOMARU MAKIO
Application Number:
JP36111492A
Publication Date:
July 22, 1994
Filing Date:
December 28, 1992
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/73; H01L21/331; H01L29/737; (IPC1-7): H01L21/331; H01L29/73
Attorney, Agent or Firm:
Kenichi Hayase