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Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2013065777
Kind Code:
A
Abstract:

To improve writing characteristics by reducing high electric-field leakage.

A semiconductor device of an embodiment comprises: a semiconductor substrate; a charge accumulation layer formed on an active region partitioned by an element isolation insulating film in the semiconductor substrate via a gate insulating film; an inter-electrode insulating film formed on an upper surface of the element isolation insulating film and on a side surface and an upper surface of the charge accumulation layer; and a control electrode layer formed on the inter-electrode insulating film. The inter-electrode insulating film has a lamination structure in which a silicon nitride film or a high dielectric constant film is sandwiched by a two-layered silicon oxide film or a lamination structure of the high dielectric constant film and the silicon oxide film and a second silicon nitride film formed between the lamination structure and the control electrode layer. A portion on the upper surface of the charge accumulation layer in the second silicon nitride film is lost.


Inventors:
NAKAHARA KOJI
MATSUO KAZUNORI
TANAKA MASAYUKI
IIKAWA HIROFUMI
Application Number:
JP2011204561A
Publication Date:
April 11, 2013
Filing Date:
September 20, 2011
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L21/336; H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
JP2010147241A2010-07-01
JP2007305668A2007-11-22
JP2008098510A2008-04-24
JP2008078317A2008-04-03
Attorney, Agent or Firm:
Patent Business Corporation Sato International Patent Office



 
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