Title:
SEMICONDUCTOR DEVICE AND METHOD AND DEVICE FOR MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3714995
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To manufacture a low-resistance titanium silicide film having a high heat resistance so as to reduce the occurrence of junction leaks and make short-channel effects to hardly occur by forming first, second, and third impurity areas so that the depths of the second and third areas can become deeper than that of the first area and the impurity concentrations in the first and second areas can become lower than that in the third area.
SOLUTION: A source-drain area is composed at least of a second impurity diffusion area 104 formed adjacently to a channel area, a first impurity area 106 offset from the channel area, and a third impurity area 108 formed in the first impurity area 106. In addition, a metal silicide film 107 having a high melting point is formed on a gate electrode and on the surface of a conductor substrate on both sides of side-wall insulating films. The depths of the second and third areas 104 and 108 are made deeper than that of the first area 106 and the impurity concentrations in the first and second areas 106 and 104 are made lower than that in the third area 108.
Inventors:
Hiroshi Iwata
Masayuki Nakano
Seizo Kakimoto
Koichiro Adachi
Satoshi Morishita
Masayuki Nakano
Seizo Kakimoto
Koichiro Adachi
Satoshi Morishita
Application Number:
JP16965895A
Publication Date:
November 09, 2005
Filing Date:
July 05, 1995
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/033; H01L21/265; H01L21/28; H01L21/336; H01L21/8238; H01L27/092; H01L29/10; H01L29/78; (IPC1-7): H01L29/78
Domestic Patent References:
| JP4255233A | ||||
| JP7111328A | ||||
| JP7142726A | ||||
| JP5326552A | ||||
| JP6112478A | ||||
| JP5114730A |
Attorney, Agent or Firm:
Kenzo Hara International Patent Office
Kenzo Hara
Ryuichi Kijima
Ichiro Kaneko
Kenzo Hara
Ryuichi Kijima
Ichiro Kaneko