Title:
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, CONTACT STRUCTURE, AND METHOD OF FORMING THE SAME
Document Type and Number:
Japanese Patent JP2002198421
Kind Code:
A
Abstract:
To provide a semiconductor device which can be decreased in contact resistance and high in reliability by increasing a contact surface area between a conductor layer and a conductive member, and also to provide a method for manufacturing the semiconductor device.
The semiconductor device includes a cell plate layer 5 formed in an insulating films 10 and 11 on a semiconductor substrate 4, a connection hole 12 formed as passed through the insulating films 10 and 11 and the cell plate layer 5, and a conductor plug 7A formed to expose the periphery, e.g. upper surface of the layer 5 contacted with the connection hole 12 and so that a conductor is filled in the connection hole 12.
Inventors:
TAKEWAKA HIROMOTO
KAMOSHIMA TAKAO
IZUMITANI JUNKO
KAMOSHIMA TAKAO
IZUMITANI JUNKO
Application Number:
JP2000393077A
Publication Date:
July 12, 2002
Filing Date:
December 25, 2000
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/768; H01L21/8242; H01L23/522; H01L27/108; (IPC1-7): H01L21/768; H01L27/108; H01L21/8242
Attorney, Agent or Firm:
Mamoru Takada (3 outside)