To manufacture a plurality of kinds of semiconductor elements such as a transistor and a resistor by a simplified process.
The method for manufacturing the semiconductor device forms an element isolation region with aspect ratio of 1 on a semiconductor substrate, forms a gate insulating film, deposits a silicon layer, forms a gate electrode and a resistive element by performing patterning, forms a sidewall of the gate electrode, performs ion implantation of phosphor with high concentration in a first active region and performs ion implantation of p-type impurity with high concentration in a second active area and the resistive element, forms a salicide block layer at temperature of 500C, deposits a metal layer so as to cover the salicide block layer, and selectively forms a metal silicide layer. A thick gate insulating film and a remarkably thin gate insulating film are formed, and ion implantation of a first conductive type which does not penetrate the thick gate insulating film and oblique ion implantation of the opposite conductivity type which also penetrates the thick gate insulating film are performed before formation of the sidewall.
KOJIMA HIDEYUKI
ANEZAKI TORU
| JP2000164727A | 2000-06-16 | |||
| JP2002329793A | 2002-11-15 |
Mikio Kuruyama