To improve reliability and yield of a semiconductor device having a through electrode.
A semiconductor substrate 10 is etched to form a via hole 16 reaching a pad electrode 12 from the back surface of the semiconductor substrate 10. The etching is performed under the etching conditions that an opening diameter A at the bottom of the via hole 16 becomes larger than planar width C of the pad electrode 12, and an opening diameter B in the middle of depth of the via hole 16 becomes smaller than the width C and the opening diameter A. Next, a second insulating film 17 which exposes the pad electrode 12 at the bottom of the via hole 16 is formed on the back surface of the semiconductor substrate 10 including the via hole 16. Next, the through electrode 20 and a wiring layer 21 electrically connected to the pad electrode 12 exposed at the bottom of the via hole 16 are formed. Furthermore, a protective layer 22 and a conductive terminal 23 are formed. At last, the semiconductor substrate 10 is cut and separated into semiconductor chips 10A by dicing.
SUZUKI AKIRA
UMEMOTO MITSUO
KANTO SANYO SEMICONDUCTORS CO
| JP2004152967A | 2004-05-27 | |||
| JP2005235858A | 2005-09-02 | |||
| JP2004153260A | 2004-05-27 | |||
| JP2002348697A | 2002-12-04 | |||
| JP2005268456A | 2005-09-29 | |||
| JP2003309221A | 2003-10-31 | |||
| JP2004221118A | 2004-08-05 | |||
| JP2004221365A | 2004-08-05 | |||
| JP2004152967A | 2004-05-27 | |||
| JP2005235858A | 2005-09-02 | |||
| JP2004153260A | 2004-05-27 | |||
| JP2002348697A | 2002-12-04 | |||
| JP2005268456A | 2005-09-29 |