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Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2011038779
Kind Code:
A
Abstract:

To provide a semiconductor device and a method of manufacturing the same preventing restrictions on sensitivity of an MEMS element due to insulating isolation region.

The semiconductor device includes: a semiconductor substrate 10 on whose upper surface a recessed part 100 is formed; a support 70 formed on the semiconductor substrate 10 so as to surround the recessed part 100; a beam-shaped movable part 20 including a movable electrode 21 disposed above the recessed part 100 and fixed to the support 70 at a position spaced apart from the movable electrode 21; a beam-shaped stationary electrode 30 disposed above the recessed part 100 so as to face the movable electrode 21 and fixed to the support 70; and the insulating isolation regions 40 which include a separation column 401 made of semiconductor and an isolation insulating film 402 disposed on a side surface of the separation column 401, are disposed between the movable and stationary electrodes 21, 30 and the support 70, respectively, and electrically isolate the movable and stationary electrodes 21, 30 from the support 70.


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Inventors:
FUJITA YUSHIN
KAWACHI HIRONOBU
NISHIKAGE HARUHIKO
Application Number:
JP2009183444A
Publication Date:
February 24, 2011
Filing Date:
August 06, 2009
Export Citation:
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Assignee:
ROHM CO LTD
International Classes:
G01P15/125; H01L29/84
Domestic Patent References:
JPH1151966A1999-02-26
JP2002208709A2002-07-26
JP2008064742A2008-03-21
JP2006170704A2006-06-29
JP2003014778A2003-01-15
JP2000286430A2000-10-13
JPH1151966A1999-02-26
JP2002208709A2002-07-26
JP2008064742A2008-03-21
JP2006170704A2006-06-29
JP2003014778A2003-01-15
Foreign References:
WO2009011222A12009-01-22
WO2009011222A12009-01-22
Attorney, Agent or Firm:
Hidekazu Miyoshi
Keishin Terayama
Hiroyuki Miyoshi
Ichitaro Ito



 
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