To provide a semiconductor device capable of stabilizing electric potential of a substrate without complicating a structure, and to provide a method of manufacturing the same.
The semiconductor device includes: a semiconductor substrate 10 of a single-crystal structure on whose upper surface a recess 100 is formed; a beam-shaped movable part 20 which includes a movable electrode 21 disposed in the recess 100 and having a lower insulating film 50 disposed on a lower surface, and is fixed to the semiconductor substrate 10 at a position spaced apart from the movable electrode 21; a beam-shaped stationary electrode 30 disposed in the recess 100 so as to face the movable electrode 21 and fixed to the semiconductor substrate 10; an insulating isolation film 40 which is disposed between the movable and stationary electrodes 20, 30 and the semiconductor substrate 10, and electrically isolates the movable and stationary electrodes 21, 30 from the substrate 10; and a contact electrode 63 connected to the substrate 10.
NISHIKAGE HARUHIKO
FUJITA YUSHIN
Keishin Terayama
Hiroyuki Miyoshi
Ichitaro Ito
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