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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2014160712
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device having a wiring pattern exceeding the resolution limit of lithography, and to provide a method of manufacturing the semiconductor device without increasing the number of processes.SOLUTION: According to an embodiment, the semiconductor device comprises: an insulating film provided on a semiconductor substrate; a plurality of wiring lines which are formed on the insulating film and arranged in a line-and-space shape; and a sidewall insulating film formed on a sidewall of the wiring lines. The plurality of wiring lines are isolated from one another by the sidewall insulating film, and the center lines of the plural wiring lines are constantly spaced in a cross section in a direction perpendicular to the extending direction of the plural wiring lines. With regard to the plural wiring lines, adjacent wiring lines have alternately different heights.

Inventors:
HATANO SHOSUKE
Application Number:
JP2013029989A
Publication Date:
September 04, 2014
Filing Date:
February 19, 2013
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L27/115; H01L21/3205; H01L21/336; H01L21/768; H01L21/8247; H01L23/522; H01L29/788; H01L29/792
Domestic Patent References:
JPH0964034A1997-03-07
JP2008027991A2008-02-07
JPH0794525A1995-04-07
JP2003332469A2003-11-21
JPH09153610A1997-06-10
JP2004146812A2004-05-20
JPH0964034A1997-03-07
JP2008027991A2008-02-07
JPH0794525A1995-04-07
JP2003332469A2003-11-21
Attorney, Agent or Firm:
Patent business corporation Satow international patent firm