Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020043374
Kind Code:
A
Abstract:
To provide a transistor which does not actually cause a short channel effect and can exhibit switching characteristics even if channel length is short; or provide a highly integrated semiconductor device to which the transistor is applied.SOLUTION: In a transistor using an oxide semiconductor film which does not actually cause a short channel effect occurring in a transistor using silicon, channel length is set at not less than 5 nm and less than 60 nm and channel width is set at not less than 5 nm and less than 200 nm, where the channel width is made 0.5 to 10 times larger than the channel length.SELECTED DRAWING: Figure 1
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Inventors:
YAMAZAKI SHUNPEI
MATSUBAYASHI DAISUKE
OKAZAKI YUTAKA
MATSUBAYASHI DAISUKE
OKAZAKI YUTAKA
Application Number:
JP2019227200A
Publication Date:
March 19, 2020
Filing Date:
December 17, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; H01L21/336; H01L21/8242; H01L27/108; H01L27/1156; H01L29/788; H01L29/792
Domestic Patent References:
| JP2011192974A | 2011-09-29 | |||
| JP2011146694A | 2011-07-28 | |||
| JP2005268724A | 2005-09-29 |
Foreign References:
| US20100140608A1 | 2010-06-10 |