To provide a semiconductor device for power application that can be easily corrected for warpage after assembling.

The semiconductor device for power application comprises a metallic heat slinger having first and second principal planes that are opposite to each other; at least one pair of insulation substrates each having mutually opposite front and rear principal planes with a circuit pattern formed on the front principal plane and a rear face pattern formed on the rear principal plane, and the rear face patterns of these insulation substrates 2 arranged and soldered at a distance on the first principal plane of the heat slinger; semiconductor elements mounted by being soldered on the circuit patterns of the insulation substrates, respectively; resin-made case whose edge on the opening side is fixed to the periphery of the first principal plane of the heat slinger, surrounding the insulation substrates and the semiconductor elements, and whose projection on the first principal plane of the heat slinger includes a beam located between the pair of insulation substrates; and a male screw which is passed through the beam to give a pressing force to the heat slinger by its end and thereby capable of bending the heat slinger toward the second principal plane side.