Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023163540
Kind Code:
A
Abstract:
To provide a semiconductor device in which a resistance film and an MIM capacitive element can be arranged in one interlayer insulating film without increasing the thickness of the interlayer insulating film.SOLUTION: A semiconductor device includes an interlayer insulating film, a resistance film, a lower electrode film and an upper electrode film arranged in the interlayer insulating film. The interlayer insulating film includes a first layer, a second layer and a third layer. The resistance film and the lower electrode film are arranged on the first layer. The resistance film and the lower electrode film are formed of the same material. The upper electrode film is opposed to the lower electrode film with the second layer interposed therebetween. The third layer covers the resistance film, the lower electrode film and the upper electrode film.SELECTED DRAWING: Figure 1
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Inventors:
HIRAIWA EIJI
Application Number:
JP2022074506A
Publication Date:
November 10, 2023
Filing Date:
April 28, 2022
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/768; H01L21/822
Attorney, Agent or Firm:
Patent Attorney Fukami Patent Office