Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012015500
Kind Code:
A
Abstract:

To provide a semiconductor device with a novel structure that can hold storage content even without power supply, and that has no limitation in the number of times of writing.

A semiconductor device comprises a second transistor provided on a first transistor, and a capacitive element. A gate electrode of the first transistor and a source electrode of the second transistor being in contact with the gate electrode are formed using materials that can provide an etching selection ratio between them. When the gate electrode of the first transistor and the source electrode of the second transistor are formed using materials that can provide an etching selection ratio, the layout margin can be reduced. Thus, the degree of integration of the semiconductor device can be improved.


More Like This:
JP2001094066SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
JPH1041477FERROELECTRIC MEMORY
WO/2012/108900LOW TEMPERATURE MEASUREMENT AND CONTROL USING LOW TEMPERATURE PYROMETRY
Inventors:
ISOBE ATSUO
IEDA YOSHINORI
KATO KIYOSHI
YAKUBO HIROTO
HATA YUUKI
Application Number:
JP2011123881A
Publication Date:
January 19, 2012
Filing Date:
June 02, 2011
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L27/108; G11C11/405; H01L21/8234; H01L21/8242; H01L21/8247; H01L27/08; H01L27/088; H01L27/115; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
JPH0254572A1990-02-23
JP2010062547A2010-03-18
JP2002368226A2002-12-20
JP2010087329A2010-04-15
JP2007103918A2007-04-19
Foreign References:
US20080308826A12008-12-18
US20100182223A12010-07-22



 
Previous Patent: SEMICONDUCTOR DEVICE

Next Patent: HEAT TREATMENT FURNACE