Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012146893
Kind Code:
A
Abstract:
To provide a semiconductor device having a fuse element with stable characteristics.
A semiconductor device 100 includes: a substrate 10; a coating structure 30 that is formed above the substrate 10 and defines a cavity part 20; and fuse elements 40a, 40b, and 40c contained in the cavity part 20. The coating structure 30 has a conductive layer. The material of the fuse elements 40a, 40b, and 40c is the same as the material of the conductive layer.
Inventors:
INABA SHOGO
Application Number:
JP2011005565A
Publication Date:
August 02, 2012
Filing Date:
January 14, 2011
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/82; H01L21/3205; H01L21/768; H01L21/822; H01L23/522; H01L27/04
Attorney, Agent or Firm:
Masahiko Ueyanagi
Osamu Suzawa
Kazuhiko Miyasaka
Osamu Suzawa
Kazuhiko Miyasaka
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