Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2016197670
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent failure and malfunction.SOLUTION: A semiconductor device comprises: an interlayer insulation film 7 composed of a phosphorous-containing silicon oxide film such as PSG and BPSG, which is provided on a first principal surface of an ntype drift layer 1 so as to cover a gate electrode 6 constituting a MOS gate structure; and a protection film 10 provided on a surface of the interlayer insulation film 7 so as to cover the interlayer insulation film 7. The protection film 10 is made of a material having a movable ion diffusion coefficient smaller than that of the interlayer insulation film 7 and has a function of preventing entry of a movable ion from a surface electrode 9 side to around the gate electrode 6. The semiconductor device further comprises the surface electrode 9 which is provided on a surface of the protection film 10 and contacts a p type base region 2 and an ntype region 3. The protection film 10 provided between the interlayer insulation film 7 and the surface electrode 9 can inhibit diffusion of a movable ion entering from the surface electrode 9 side, thereby preventing ion contamination.SELECTED DRAWING: Figure 2
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Inventors:
KOYAMA HIROMI
TERANISHI HIDEAKI
TERANISHI HIDEAKI
Application Number:
JP2015077217A
Publication Date:
November 24, 2016
Filing Date:
April 03, 2015
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L21/336; H01L21/316; H01L21/318; H01L29/78
Attorney, Agent or Firm:
Akinori Sakai
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