Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2017118140
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a transistor using an oxide semiconductor film, which includes a back gate electrode with less range of parasitic capacitance growth and high controllability on threshold voltage; and provide a semiconductor device using the transistor.SOLUTION: A transistor using an oxide semiconductor film includes a back gate electrode which overlaps a drain electrode and does not overlap a source electrode. By forming the back gate electrode to overlap the drain electrode and not to overlap the source electrode, in comparison with the case where the back gate electrode is formed to overlap both of the drain electrode and the source electrode, an operation speed of the transistor can be increased without deteriorating controllability on threshold voltage of the transistor.SELECTED DRAWING: Figure 1
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Inventors:
MIYAKE HIROYUKI
KANEYASU MAKOTO
KANEYASU MAKOTO
Application Number:
JP2017040086A
Publication Date:
June 29, 2017
Filing Date:
March 03, 2017
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; H01L21/336; H01L21/8244; H01L27/10; H01L27/11; H01L51/50; H05B44/00
Domestic Patent References:
| JP2010123938A | 2010-06-03 | |||
| JP2011172217A | 2011-09-01 |
Foreign References:
| US20070290227A1 | 2007-12-20 |