Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018022922
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To enable separation of a power supply voltage of a first circuit and a power supply voltage of a second circuit without using PN junction and inhibit increase in size of a semiconductor device.SOLUTION: A semiconductor device includes a rectifier element HRD which comprises a second conductivity type layer LDR2, a first high-concentration second conductivity type region HDF1, a second high-concentration second conductivity type region HDF2, an element isolation film EI2, a first insulation layer CGINS and a first conductive film CG. A first contact CON1 is connected to the first high-concentration second conductivity type region HDF1, and a second contact CON2 is connected to the second hight-concentration second conductivity type region HDF2, and a third contact CON3 is connected to the first conductive film CG. The first contact CON1, the second contact CON2 and the third contact CON3 are isolated from each other.SELECTED DRAWING: Figure 1
Inventors:
KAYA YOSHINORI
NAKAHARA YASUSHI
ARAYA AZUMA
KANDA MAKOTO
KURIHARA TOMOATSU
TODA TETSU
NAKAHARA YASUSHI
ARAYA AZUMA
KANDA MAKOTO
KURIHARA TOMOATSU
TODA TETSU
Application Number:
JP2017199059A
Publication Date:
February 08, 2018
Filing Date:
October 13, 2017
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/76; H01L21/822; H01L21/8234; H01L27/04; H01L27/088; H02M1/08; H03K17/06
Domestic Patent References:
| JPH07508873A | 1995-09-28 | |||
| JP2013062717A | 2013-04-04 |
Foreign References:
| WO2013069408A1 | 2013-05-16 |
Attorney, Agent or Firm:
Shinji Hayami
Satoshi Amagi
Satoshi Amagi