Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019004163
Kind Code:
A
Abstract:
To provide a transistor using an oxide semiconductor layer having electric characteristics required according to use, and to provide a semiconductor device having the transistor.SOLUTION: A transistor comprises a semiconductor layer, a source electrode layer or a drain electrode layer, a gate insulation film, and a gate electrode layer sequentially laminated on in this order an oxide insulation film. As the semiconductor layer, an oxide semiconductor laminate is used, the oxide semiconductor laminate includes at least two layers of oxide semiconductor layers having different bandgap from each other. Oxygen and/or dopant may be introduced to the oxide semiconductor laminate.SELECTED DRAWING: Figure 1
Inventors:
YAMAZAKI SHUNPEI
HONDA TATSUYA
HONDA TATSUYA
Application Number:
JP2018150298A
Publication Date:
January 10, 2019
Filing Date:
August 09, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; H01L21/8239; H01L21/8242; H01L27/105; H01L27/108; H01L27/146; H01L51/50; H05B33/14
Domestic Patent References:
| JP2010021170A | 2010-01-28 | |||
| JPH05129447A | 1993-05-25 | |||
| JPH07235596A | 1995-09-05 | |||
| JP2008270773A | 2008-11-06 | |||
| JP2008235873A | 2008-10-02 | |||
| JP2009135350A | 2009-06-18 | |||
| JP2010219511A | 2010-09-30 | |||
| JPH10326780A | 1998-12-08 | |||
| JP2003255394A | 2003-09-10 |
Foreign References:
| WO2011070900A1 | 2011-06-16 |