Title:
半導体装置
Document Type and Number:
Japanese Patent JP5583266
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor substrate on which a semiconductor device is formed; first and second pads; a first insulating film which is formed above the semiconductor substrate; a plurality of wiring lines which are embedded in ditches provided in the first insulating film; a second insulating film provided to cover the first insulating film and the plurality of wiring lines; a semiconductor layer formed on the second insulating film; a source electrode connected with the semiconductor layer; and a drain electrode connected with the semiconductor layer. The plurality of wiring lines includes a gate electrode provided in a position which is opposite to the semiconductor layer. The semiconductor layer, the source electrode, the drain electrode and the gate electrode configure an ESD protection device to discharge a current by ESD surge from the first pad to the second pad.
Inventors:
Takaaki Kaneko
Naoya Inoue
Wood Yoshihiro
Naoya Inoue
Wood Yoshihiro
Application Number:
JP2013503558A
Publication Date:
September 03, 2014
Filing Date:
March 06, 2012
Export Citation:
Assignee:
ルネサス electronics incorporated company
International Classes:
H01L27/04; H01L21/3205; H01L21/768; H01L21/822; H01L21/8234; H01L23/532; H01L27/06; H01L27/088; H01L29/786
Domestic Patent References:
| JP2010129958A | 2010-06-10 | |||
| JP2010141174A | 2010-06-24 | |||
| JP2008218818A | 2008-09-18 | |||
| JPS60148161A | 1985-08-05 | |||
| JP2010206186A | 2010-09-16 | |||
| JP2005019452A | 2005-01-20 | |||
| JPH01295455A | 1989-11-29 | |||
| JP2010129958A | 2010-06-10 | |||
| JP2010141174A | 2010-06-24 |
Foreign References:
| WO2010030532A1 | 2010-03-18 | |||
| WO2010030532A1 | 2010-03-18 |
Attorney, Agent or Firm:
Minoru Kudo