Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6363380
Kind Code:
B2
Abstract:
To provide a semiconductor device to which information can be input in low-illuminance conditions or at a location distant from the semiconductor device. An ultrasonic wave sensor is provided in the semiconductor device with a display region having photosensors. An object to be detected is detected by switching the photosensors and the ultrasonic wave sensor in accordance with illuminance around the semiconductor device or a distance between the semiconductor device and the object. The photosensors and the ultrasonic wave sensor can be used concurrently.
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Inventors:
Yuji Iwaki
Yanagawa Katsuyoshi
Yanagawa Katsuyoshi
Application Number:
JP2014081796A
Publication Date:
July 25, 2018
Filing Date:
April 11, 2014
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G06F3/041; G01B21/00; G01S15/10; G01S15/42; G06F3/042; G06F3/043
Domestic Patent References:
| JP2011022853A | ||||
| JP2013037678A | ||||
| JP2009199158A | ||||
| JP2007065800A | ||||
| JP2007525669A | ||||
| JP2006235859A |
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