Title:
半導体装置
Document Type and Number:
Japanese Patent JP6619073
Kind Code:
B2
Abstract:
To reduce oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film and to improve electric characteristics of a transistor including the oxide semiconductor film. A semiconductor device includes a gate electrode whose Gibbs free energy for oxidation is higher than that of a gate insulating film. In a region where the gate electrode is in contact with the gate insulating film, oxygen moves from the gate electrode to the gate insulating film, which is caused because the gate electrode has higher Gibbs free energy for oxidation than the gate insulating film. The oxygen passes through the gate insulating film and is supplied to the oxide semiconductor film in contact with the gate insulating film, whereby oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced.
Inventors:
Hiromitsu Goto
Tetsuhiro Tanaka
Tetsuhiro Tanaka
Application Number:
JP2018223056A
Publication Date:
December 11, 2019
Filing Date:
November 29, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; H01L21/28; H01L21/283; H01L21/8239; H01L21/8242; H01L27/105; H01L27/108; H01L27/1156; H01L29/417; H01L29/423; H01L29/49; H01L29/786; H01L29/788; H01L29/792
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